ZXMN3A06DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Weight :

73.992255mg

REACH SVHC :

No SVHC

Termination :

SMD/SMT

Mounting Type :

Surface Mount

Nominal Vgs :

1 V

Radiation Hardening :

No

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

4mm

Gate Charge (Qg) (Max) @ Vgs :

17.5nC @ 10V

Number of Elements :

2

Number of Terminations :

8

Dual Supply Voltage :

30V

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

4.9A

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Pin Count :

8

Rds On (Max) @ Id, Vgs :

35m Ω @ 9A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

796pF @ 25V

Height :

1.5mm

Rise Time :

6.4ns

Length :

5mm

Factory Lead Time :

17 Weeks

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

30V

Number of Pins :

8

Resistance :

35mOhm

Pbfree Code :

yes

Element Configuration :

Dual

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Max Power Dissipation :

2.1W

Current Rating :

4.8A

Fall Time (Typ) :

9.4 ns

Turn On Delay Time :

3 ns

Drain Current-Max (Abs) (ID) :

4.9A

Threshold Voltage :

1V

Power - Max :

1.8W

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

2.1W

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Published :

2006

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Turn-Off Delay Time :

21.6 ns

Continuous Drain Current (ID) :

6.2A

Mount :

Surface Mount

Number of Channels :

2

Lead Free :

Lead Free

FET Type :

2 N-Channel (Dual)