ZXMN3A04DN8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pin Count :

8

Fall Time (Typ) :

6.1 ns

Drain to Source Breakdown Voltage :

30V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Operating Mode :

ENHANCEMENT MODE

Current Rating :

6.8A

Voltage - Rated DC :

30V

RoHS Status :

RoHS Compliant

Number of Channels :

2

Max Power Dissipation :

1.25W

Gate Charge (Qg) (Max) @ Vgs :

36.8nC @ 10V

Rise Time :

6.1ns

Rds On (Max) @ Id, Vgs :

20m Ω @ 12.6A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Terminal Finish :

MATTE TIN

Turn-Off Delay Time :

38.1 ns

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Mount :

Surface Mount

Power - Max :

1.81W

Power Dissipation :

1.25W

FET Type :

2 N-Channel (Dual)

Weight :

73.992255mg

Input Capacitance (Ciss) (Max) @ Vds :

1890pF @ 15V

Number of Pins :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

6.5A

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

2

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

5.2 ns

Terminal Form :

Gull wing

ECCN Code :

EAR99

Published :

2012

Lead Free :

Lead Free