ZXMN3A04DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Current Rating :

6.8A

Number of Pins :

8

Resistance :

20mOhm

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Mounting Type :

Surface Mount

Turn-Off Delay Time :

38.1 ns

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

20m Ω @ 12.6A, 10V

Continuous Drain Current (ID) :

8.5A

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

5.2 ns

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Voltage - Rated DC :

30V

Number of Terminations :

8

Terminal Finish :

Matte Tin (Sn)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power - Max :

1.81W

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

1890pF @ 15V

Published :

2012

ECCN Code :

EAR99

Height :

1.5mm

Weight :

73.992255mg

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

12V

Current - Continuous Drain (Id) @ 25°C :

6.5A

Number of Channels :

2

Gate Charge (Qg) (Max) @ Vgs :

36.8nC @ 10V

Power Dissipation :

2.15W

Rise Time :

6.1ns

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Length :

5mm

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Fall Time (Typ) :

20.2 ns

Mount :

Surface Mount

Width :

4mm

Factory Lead Time :

19 Weeks

Max Power Dissipation :

2.15W