ZXMN2AMCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn On Delay Time :

2.3 ns

FET Type :

2 N-Channel (Dual)

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Pin Count :

8

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e4

Gate to Source Voltage (Vgs) :

12V

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

8

Factory Lead Time :

10 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Max Power Dissipation :

1.7W

Continuous Drain Current (ID) :

3.7A

Turn-Off Delay Time :

1.6 ns

Fall Time (Typ) :

1.3 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2.45W

Input Capacitance (Ciss) (Max) @ Vds :

299pF @ 15V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

3.1nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

FET Feature :

Standard

Series :

Automotive, AEC-Q101

Mount :

Surface Mount

Published :

2010

Additional Feature :

High Reliability

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Lead Free :

Lead Free

Number of Pins :

8

Number of Elements :

2

Rise Time :

2.6ns

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

13A

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

120m Ω @ 4A, 4.5V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

20V

Package / Case :

8-VDFN Exposed Pad