ZXMN2A04DN8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Additional Feature :

LOW THRESHOLD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

RoHS Compliant

Current Rating :

6A

ECCN Code :

EAR99

Turn-Off Delay Time :

50.5 ns

Mount :

Surface Mount

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

700mV @ 250μA (Min)

Turn On Delay Time :

7.9 ns

Fall Time (Typ) :

14.8 ns

Input Capacitance (Ciss) (Max) @ Vds :

1880pF @ 10V

Number of Channels :

2

Number of Terminations :

8

Pin Count :

8

Power - Max :

1.8W

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Number of Pins :

8

Number of Elements :

2

Drain to Source Breakdown Voltage :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2012

FET Feature :

Logic Level Gate

Drain Current-Max (Abs) (ID) :

7.7A

Rds On (Max) @ Id, Vgs :

25m Ω @ 5.9A, 4.5V

Pbfree Code :

No

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

12V

Max Power Dissipation :

1.25W

Weight :

73.992255mg

Continuous Drain Current (ID) :

5.9A

Rise Time :

14.8ns

Voltage - Rated DC :

20V

Lead Free :

Lead Free

Power Dissipation :

1.25W

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

22.1nC @ 5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED