ZXMN2A04DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

1880pF @ 10V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Turn On Delay Time :

7.9 ns

Rds On (Max) @ Id, Vgs :

25m Ω @ 5.9A, 4.5V

Max Power Dissipation :

2.1W

Peak Reflow Temperature (Cel) :

260

Resistance :

25mOhm

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Power Dissipation :

2.1W

Number of Pins :

8

Vgs(th) (Max) @ Id :

700mV @ 250μA (Min)

Gate to Source Voltage (Vgs) :

12V

Gate Charge (Qg) (Max) @ Vgs :

22.1nC @ 5V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

Factory Lead Time :

17 Weeks

Drain to Source Breakdown Voltage :

20V

Lead Free :

Lead Free

FET Type :

2 N-Channel (Dual)

Time@Peak Reflow Temperature-Max (s) :

40

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

LOW THRESHOLD

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

5.9A

Number of Terminations :

8

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Turn-Off Delay Time :

50.5 ns

Width :

4mm

Number of Channels :

2

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

2

Transistor Application :

SWITCHING

Power - Max :

1.8W

Fall Time (Typ) :

30.6 ns

Drain Current-Max (Abs) (ID) :

5.9A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Length :

5mm

Continuous Drain Current (ID) :

7.7A

Rise Time :

14.8ns

ECCN Code :

EAR99

Pin Count :

8

Current Rating :

6A

Weight :

73.992255mg

Height :

1.5mm

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Voltage - Rated DC :

20V