ZXMN2A04DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

30.6 ns

Terminal Form :

Gull wing

Max Power Dissipation :

2.1W

Rise Time :

14.8ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Current Rating :

6A

Mount :

Surface Mount

Transistor Element Material :

SILICON

Voltage - Rated DC :

20V

Additional Feature :

LOW THRESHOLD

Continuous Drain Current (ID) :

7.7A

Height :

1.5mm

JESD-609 Code :

e3

Published :

2012

Gate to Source Voltage (Vgs) :

12V

Radiation Hardening :

No

Transistor Application :

SWITCHING

Number of Channels :

2

Length :

5mm

Resistance :

25mOhm

ECCN Code :

EAR99

Power Dissipation :

2.1W

FET Type :

2 N-Channel (Dual)

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

25m Ω @ 5.9A, 4.5V

REACH SVHC :

No SVHC

Pin Count :

8

Turn-Off Delay Time :

50.5 ns

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

20V

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

22.1nC @ 5V

Drain Current-Max (Abs) (ID) :

5.9A

Width :

4mm

Vgs(th) (Max) @ Id :

700mV @ 250μA (Min)

Current - Continuous Drain (Id) @ 25°C :

5.9A

Power - Max :

1.8W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

40

Turn On Delay Time :

7.9 ns

Weight :

73.992255mg

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

17 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1880pF @ 10V

Peak Reflow Temperature (Cel) :

260