SUM18N25-165-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

15 ns

Transistor Element Material :

SILICON

Rise Time :

130ns

Series :

TrenchFET®

Continuous Drain Current (ID) :

18A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2014

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

165m Ω @ 14A, 10V

Radiation Hardening :

No

DS Breakdown Voltage-Min :

250V

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

20A

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

100 ns

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 25V

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Pin Count :

4

Element Configuration :

Single

Turn-Off Delay Time :

30 ns

Drain to Source Voltage (Vdss) :

250V

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Mount :

Surface Mount

JESD-609 Code :

e3

Terminal Form :

Gull wing

Power Dissipation :

3.75W

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Power Dissipation-Max :

3.75W Ta 150W Tc

Resistance :

165mOhm

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Number of Elements :

1