SUM110N06-3M4L-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 30A, 10V

Continuous Drain Current (ID) :

110A

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Number of Terminations :

2

Vgs (Max) :

±20V

Packaging :

Cut Tape (CT)

Pulsed Drain Current-Max (IDM) :

440A

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

375W

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3V @ 250µA

ECCN Code :

EAR99

Width :

9.65mm

Published :

2017

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Weight :

1.437803g

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Length :

10.41mm

Turn-Off Delay Time :

110 ns

Height :

4.83mm

Rise Time :

130ns

Fall Time (Typ) :

280 ns

Input Capacitance (Ciss) (Max) @ Vds :

12900pF @ 25V

Turn On Delay Time :

22 ns

Transistor Application :

SWITCHING

Power Dissipation-Max :

3.75W Ta 375W Tc

Resistance :

3.4mOhm

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

60V

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

280 mJ

Pin Count :

4

Threshold Voltage :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Terminal Form :

Gull wing

Number of Channels :

1

Pbfree Code :

yes