SUM110N04-2M1P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.41mm

Threshold Voltage :

1.2V

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Turn On Delay Time :

102 ns

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Height :

4.83mm

Fall Time (Typ) :

60 ns

Transistor Element Material :

SILICON

Number of Pins :

3

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Pin Count :

4

Power Dissipation-Max :

3.13W Ta 312W Tc

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

Published :

2016

Turn-Off Delay Time :

180 ns

Input Capacitance (Ciss) (Max) @ Vds :

18800pF @ 20V

Time@Peak Reflow Temperature-Max (s) :

30

Width :

9.65mm

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

29A Ta 110A Tc

Drain to Source Breakdown Voltage :

40V

Pulsed Drain Current-Max (IDM) :

250A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Power Dissipation :

312W

Rise Time :

62ns

JESD-609 Code :

e3

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

11A

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 30A, 10V

Lead Free :

Lead Free

Weight :

1.437803g

Resistance :

2.1MOhm