SUM110P04-05-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Turn On Time-Max (ton) :

480ns

Weight :

1.437803g

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

240A

Series :

TrenchFET®

Turn Off Time-Max (toff) :

220ns

Length :

10.41mm

Rds On (Max) @ Id, Vgs :

5m Ω @ 20A, 10V

Max Junction Temperature (Tj) :

175°C

Vgs(th) (Max) @ Id :

4V @ 250µA

Pin Count :

4

ECCN Code :

EAR99

Turn-Off Delay Time :

110 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Rise Time :

290ns

Resistance :

4.2mOhm

Contact Plating :

Tin

REACH SVHC :

No SVHC

Radiation Hardening :

No

Nominal Vgs :

-3 V

Turn On Delay Time :

25 ns

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Threshold Voltage :

-3V

Transistor Element Material :

SILICON

Published :

2016

Power Dissipation :

15W

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

40V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

15W Ta 375W Tc

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Continuous Drain Current (ID) :

-110A

Drain to Source Breakdown Voltage :

-40V

Number of Elements :

1

FET Type :

P-Channel

Height :

5.08mm

Transistor Application :

SWITCHING

Width :

9.65mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

35 ns

Number of Channels :

1

Vgs (Max) :

±20V

Lead Free :

Lead Free

Case Connection :

DRAIN

Factory Lead Time :

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

11300pF @ 25V

Element Configuration :

Single