SUM110N10-09-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Radiation Hardening :

No

Terminal Form :

Gull wing

Case Connection :

DRAIN

Height :

4.83mm

Mount :

Surface Mount

Length :

10.41mm

Mounting Type :

Surface Mount

Element Configuration :

Single

Number of Terminations :

2

Dual Supply Voltage :

100V

Width :

9.65mm

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Pbfree Code :

yes

Factory Lead Time :

14 Weeks

Turn On Delay Time :

20 ns

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

4V

ECCN Code :

EAR99

Termination :

SMD/SMT

Published :

2011

Rise Time :

125ns

Power Dissipation-Max :

3.75W Ta 375W Tc

FET Type :

N-Channel

Power Dissipation :

3.75W

Continuous Drain Current (ID) :

110A

Number of Elements :

1

REACH SVHC :

Unknown

Vgs (Max) :

±20V

Weight :

1.437803g

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Terminal Finish :

MATTE TIN OVER NICKEL

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 30A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Resistance :

9.5MOhm

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Fall Time (Typ) :

130 ns

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Reverse Recovery Time :

70 ns

Input Capacitance (Ciss) (Max) @ Vds :

6700pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

4 V

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

440A

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

100V

Packaging :

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Turn-Off Delay Time :

55 ns

Series :

TrenchFET®