SUM110N06-3M9H-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Height :

4.83mm

Pin Count :

4

REACH SVHC :

No SVHC

Published :

2008

Element Configuration :

Single

Drain to Source Breakdown Voltage :

40V

Continuous Drain Current (ID) :

110A

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

TrenchFET®

Weight :

1.437803g

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

15800pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

9.65mm

Turn-Off Delay Time :

75 ns

Radiation Hardening :

No

Number of Channels :

1

JESD-609 Code :

e3

Power Dissipation-Max :

3.75W Ta 375W Tc

Number of Pins :

3

Length :

10.67mm

Turn On Delay Time :

45 ns

Threshold Voltage :

3.4V

Pulsed Drain Current-Max (IDM) :

440A

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Mounting Type :

Surface Mount

Rise Time :

160ns

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 30A, 10V

Number of Terminations :

2

Fall Time (Typ) :

14 ns

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

245 mJ

Power Dissipation :

375W

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Transistor Element Material :

SILICON

FET Type :

N-Channel

Number of Elements :

1

Drain to Source Voltage (Vdss) :

60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

ECCN Code :

EAR99

Pbfree Code :

yes