SUM110N03-04P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Terminal Form :

Gull wing

Power Dissipation :

3.75W

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Drain-source On Resistance-Max :

0.0042Ohm

Element Configuration :

Single

Pbfree Code :

yes

JESD-609 Code :

e3

FET Type :

N-Channel

Power Dissipation-Max :

3.75W Ta 120W Tc

Transistor Element Material :

SILICON

Published :

2009

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 20A, 10V

Operating Temperature :

-55°C~175°C TJ

Pin Count :

4

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Application :

SWITCHING

Number of Terminations :

2

REACH SVHC :

No SVHC

Turn On Delay Time :

12 ns

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

10 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

12ns

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Turn-Off Delay Time :

40 ns

Mounting Type :

Surface Mount

Threshold Voltage :

1V

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

110A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)