SUM110N04-04-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2016

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

85 ns

Drain-source On Resistance-Max :

0.0035Ohm

Pulsed Drain Current-Max (IDM) :

350A

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

40V

Pbfree Code :

yes

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

115ns

Radiation Hardening :

No

Power Dissipation-Max :

3.75W Ta 250W Tc

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 30A, 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Element Configuration :

Single

ECCN Code :

EAR99

Power Dissipation :

3.75W

Turn-Off Delay Time :

75 ns

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

110A

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

20 ns

Vgs (Max) :

±20V

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Factory Lead Time :

6 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)