SUM110P04-04L-E3
- Mfr.Part #
- SUM110P04-04L-E3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 110A TO263
- Stock
- 2,465
- In Stock :
- 2,465
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 110 ns
- Element Configuration :
- Single
- FET Type :
- P-Channel
- Continuous Drain Current (ID) :
- 110A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate Charge (Qg) (Max) @ Vgs :
- 350nC @ 10V
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 25 ns
- Vgs (Max) :
- ±20V
- Pin Count :
- 4
- Mount :
- Surface Mount, Through Hole
- Series :
- TrenchFET®
- Number of Channels :
- 1
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 3.75W Ta 375W Tc
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 2
- Pulsed Drain Current-Max (IDM) :
- 240A
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 11200pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 30ns
- Radiation Hardening :
- No
- Published :
- 2009
- Drain to Source Voltage (Vdss) :
- 40V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 190 ns
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 4.2m Ω @ 30A, 10V
- Height :
- 4.83mm
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 1.437803g
- Drain to Source Breakdown Voltage :
- -40V
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Length :
- 10.41mm
- Power Dissipation :
- 3.75W
- Packaging :
- Tape and Reel (TR)
- Width :
- 9.65mm
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Factory Lead Time :
- 14 Weeks
- Resistance :
- 4.2mOhm
- Datasheets
- SUM110P04-04L-E3
P-Channel Tape & Reel (TR) 4.2m Ω @ 30A, 10V ±20V 11200pF @ 25V 350nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM110P04-04L-E3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 11200pF @ 25V.This device conducts a continuous drain current (ID) of 110A, which is the maximum continuous current transistor can conduct.Using VGS=-40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 190 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 240A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SUM110P04-04L-E3 Features
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 190 ns
based on its rated peak drain current 240A.
a 40V drain to source voltage (Vdss)
SUM110P04-04L-E3 Applications
There are a lot of Vishay Siliconix
SUM110P04-04L-E3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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