SUM110N03-03P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

90 ns

Turn On Delay Time :

20 ns

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 30A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

2

Fall Time (Typ) :

25 ns

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Vgs (Max) :

±20V

Rise Time :

20ns

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0026Ohm

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

110A

Current - Continuous Drain (Id) @ 25°C :

110A Tc

JESD-609 Code :

e3

Power Dissipation-Max :

3.75W Ta 375W Tc

Terminal Form :

Gull wing

Series :

TrenchFET®

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Published :

2009

Input Capacitance (Ciss) (Max) @ Vds :

12100pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Mount :

Surface Mount

Power Dissipation :

3.75W

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

400A