SUM110N08-07P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

22 ns

Turn On Delay Time :

17 ns

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Series :

TrenchFET®

Vgs (Max) :

±20V

Number of Terminations :

2

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

4250pF @ 30V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Drain to Source Breakdown Voltage :

75V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

7m Ω @ 20A, 10V

Rise Time :

5ns

Number of Elements :

1

Power Dissipation-Max :

3.75W Ta 208.3W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

3.75W

Published :

2016

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

FET Type :

N-Channel

Continuous Drain Current (ID) :

110A

Radiation Hardening :

No

Fall Time (Typ) :

6 ns

Resistance :

7mOhm

Element Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Mount :

Surface Mount

Pin Count :

4