SUM110N04-03-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

25 ns

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Rise Time :

170ns

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

110 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 30A, 10V

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Length :

10.41mm

Threshold Voltage :

4V

Pulsed Drain Current-Max (IDM) :

440A

Termination :

SMD/SMT

Published :

2009

Nominal Vgs :

4 V

Mounting Type :

Surface Mount

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Radiation Hardening :

No

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

8250pF @ 25V

Series :

TrenchFET®

Number of Channels :

1

Dual Supply Voltage :

40V

Power Dissipation :

437.5W

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.75W Ta 375W Tc

Transistor Application :

SWITCHING

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Pin Count :

4

Number of Elements :

1

Drain-source On Resistance-Max :

0.0028Ohm

Reverse Recovery Time :

60 ns

Drain to Source Breakdown Voltage :

40V

Weight :

1.437803g

Continuous Drain Current (ID) :

110A

Width :

9.65mm

Height :

4.83mm

Turn-Off Delay Time :

55 ns

ECCN Code :

EAR99