SUM120N04-1M7L-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

120A Tc

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.5V @ 250μA

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

40V

Number of Elements :

1

Transistor Application :

SWITCHING

Number of Terminations :

2

Series :

TrenchFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Published :

2016

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0017Ohm

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

40V

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

11685pF @ 20V

Factory Lead Time :

13 Weeks

Avalanche Energy Rating (Eas) :

423 mJ

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

480A

Gate Charge (Qg) (Max) @ Vgs :

285nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Power Dissipation-Max :

375W Tc

Rds On (Max) @ Id, Vgs :

17m Ω @ 30A, 10V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

120A

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V