SUM110P08-11-E3
- Mfr.Part #
- SUM110P08-11-E3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 80V 110A TO263
- Stock
- 28,596
- In Stock :
- 28,596
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Power Dissipation-Max :
- 13.6W Ta 375W Tc
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 1.437803g
- Number of Channels :
- 1
- Element Configuration :
- Single
- Rise Time :
- 410ns
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- TrenchFET®
- Rds On (Max) @ Id, Vgs :
- 11.1mOhm @ 20A, 10V
- Turn-Off Delay Time :
- 145 ns
- Continuous Drain Current (ID) :
- 110A
- Mounting Type :
- Surface Mount
- Rds On Max :
- 11.1 mΩ
- Supplier Device Package :
- TO-263 (D2Pak)
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 80V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 10.41mm
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 470 ns
- FET Type :
- P-Channel
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Width :
- 9.65mm
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 280nC @ 10V
- Drain to Source Resistance :
- 11.1mOhm
- Min Operating Temperature :
- -55°C
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn On Delay Time :
- 25 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 11500pF @ 40V
- Input Capacitance :
- 11.5nF
- Height :
- 4.83mm
- Published :
- 2009
- Datasheets
- SUM110P08-11-E3
P-Channel Tape & Reel (TR) 11.1mOhm @ 20A, 10V ±20V 11500pF @ 40V 280nC @ 10V 80V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM110P08-11-E3 Overview
The maximum input capacitance of this device is 11500pF @ 40V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 110A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 145 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 11.1mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 80V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
SUM110P08-11-E3 Features
a continuous drain current (ID) of 110A
the turn-off delay time is 145 ns
single MOSFETs transistor is 11.1mOhm
a 80V drain to source voltage (Vdss)
SUM110P08-11-E3 Applications
There are a lot of Vishay Siliconix
SUM110P08-11-E3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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