SUM110P06-08L-E3
- Mfr.Part #
- SUM110P06-08L-E3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 110A TO263
- Stock
- 93,357
- In Stock :
- 93,357
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 300 ns
- Continuous Drain Current (ID) :
- -110A
- Turn-Off Delay Time :
- 140 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Series :
- TrenchFET®
- FET Type :
- P-Channel
- Max Operating Temperature :
- 175°C
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Drain to Source Voltage (Vdss) :
- 60V
- Lead Free :
- Lead Free
- Power Dissipation :
- 3.75W
- Mount :
- Surface Mount
- Height :
- 5.08mm
- Contact Plating :
- Tin
- Resistance :
- 8mOhm
- Threshold Voltage :
- -1V
- Mounting Type :
- Surface Mount
- Input Capacitance :
- 9.2nF
- Number of Channels :
- 1
- Published :
- 2009
- Factory Lead Time :
- 14 Weeks
- Supplier Device Package :
- TO-263 (D2Pak)
- Drain to Source Breakdown Voltage :
- -60V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 9200pF @ 25V
- Width :
- 9.65mm
- Rds On (Max) @ Id, Vgs :
- 8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Min Operating Temperature :
- -55°C
- Number of Elements :
- 1
- Weight :
- 1.437803g
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Max Junction Temperature (Tj) :
- 175°C
- Rds On Max :
- 8 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn On Delay Time :
- 20 ns
- Rise Time :
- 190ns
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Drain to Source Resistance :
- 6.5mOhm
- Power Dissipation-Max :
- 3.75W Ta 272W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Length :
- 10.41mm
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- SUM110P06-08L-E3
P-Channel Tape & Reel (TR) 8mOhm @ 30A, 10V ±20V 9200pF @ 25V 240nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM110P06-08L-E3 Description
SUM110P06-08L-E3 is a 60-V P-Channel MOSFET. A P-channel MOSFET uses hole flow as the charge carrier, which has less mobility than the electron flow used in N-channel MOSFETs. In functional terms, the main difference is that P-channel MOSFETs require a negative voltage from the gate to the source (VGS) to turn on (as opposed to an N-channel MOSFET, which requires a positive VGS voltage). This makes P-channel MOSFETs the ideal choice for high-side switches. The simplicity of the design is beneficial for low-voltage drive applications and non-isolated POLs, where space is limited.
SUM110P06-08L-E3 Features
Drain-Source Voltage: -60V
Gate-Source Voltage: ± 20V
Continuous Drain Current TC = 25 °C: - 110A
Pulsed Drain Current: - 200A
Maximum Power Dissipation TC = 25 °C: 272W
TrenchFET® Power MOSFET
Package with Low Thermal Resistance
100 % Rg Tested
SUM110P06-08L-E3 Applications
Battery protection
Revere polarity protection
Linear battery chargers
Load switched
DC-DC converters
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