SUM110P06-07L-E3
- Mfr.Part #
- SUM110P06-07L-E3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 110A TO263
- Stock
- 121,861
- In Stock :
- 121,861
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 3.75W
- Terminal Finish :
- Matte Tin (Sn)
- Drain to Source Breakdown Voltage :
- -60V
- Element Configuration :
- Single
- Turn On Delay Time :
- 20 ns
- Threshold Voltage :
- -3V
- Vgs (Max) :
- ±20V
- Weight :
- 1.946308g
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Height :
- 5.08mm
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 110 ns
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- -11A
- Pin Count :
- 4
- Rds On (Max) @ Id, Vgs :
- 6.9m Ω @ 30A, 10V
- Number of Elements :
- 1
- Power Dissipation-Max :
- 3.75W Ta 375W Tc
- FET Type :
- P-Channel
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Width :
- 9.65mm
- Max Junction Temperature (Tj) :
- 175°C
- Series :
- TrenchFET®
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 345nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 240A
- Nominal Vgs :
- -3 V
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Cut Tape (CT)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Rise Time :
- 160ns
- Length :
- 10.41mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 11400pF @ 25V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 14 Weeks
- Resistance :
- 6.9mOhm
- Drain to Source Voltage (Vdss) :
- 60V
- Fall Time (Typ) :
- 240 ns
- Transistor Element Material :
- SILICON
- Datasheets
- SUM110P06-07L-E3
P-Channel Cut Tape (CT) 6.9m Ω @ 30A, 10V ±20V 11400pF @ 25V 345nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM110P06-07L-E3 Description
IRFR3708TRPBF developed by Vishay Siliconix is a type of MOSFET which is a field-effect transistor that uses the effect of electric field to control the semiconductor (S) through the gate of the metal layer (M) through the oxide layer (O). Its characteristic is to use the gate voltage to control the drain current. Its input terminal is connected to a high level or a low level (usually a high level), and a voltage drop Vce will be generated when the current Ib flows through the MOSFET. The size of this voltage drop is determined by the forward conduction angle of the P-type and N-type diodes. size to decide.
SUM110P06-07L-E3 Features
Fast switching speed
Ultra-low gate impedance
Low power consumption
Strong driving ability
Full characterized avalanche voltage and current
SUM110P06-07L-E3 Applications
Analog circuits
Digital circuits
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