STP5NK65Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Turn On Delay Time :

20 ns

Series :

SuperMESH™

Drain to Source Breakdown Voltage :

650V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Packaging :

Tube

Continuous Drain Current (ID) :

5A

Power Dissipation-Max :

85W Tc

Turn-Off Delay Time :

140 ns

Vgs (Max) :

±30V

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

5A

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-220-3

Radiation Hardening :

No

Fall Time (Typ) :

40 ns

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Rise Time :

15ns

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 2.1A, 10V

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Base Part Number :

STP5N

Pin Count :

3

Power Dissipation :

85W

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

20A

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 25V