STP52N25M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

25V

Additional Feature :

ULTRA LOW-ON RESISTANCE

Pin Count :

3

Drain-source On Resistance-Max :

0.065Ohm

Drain to Source Breakdown Voltage :

250V

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 50V

Fall Time (Typ) :

64 ns

Continuous Drain Current (ID) :

28A

Base Part Number :

STP52N

Mounting Type :

Through Hole

Vgs (Max) :

±25V

Transistor Application :

SWITCHING

Power Dissipation :

110W

Package / Case :

TO-220-3

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Series :

MDmesh™ V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 100µA

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Rise Time :

18ns

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

230 mJ

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Power Dissipation-Max :

110W Tc

Rds On (Max) @ Id, Vgs :

65m Ω @ 14A, 10V

Pulsed Drain Current-Max (IDM) :

112A

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Packaging :

Tube

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3