STP55NF06FP
- Mfr.Part #
- STP55NF06FP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 50A TO220FP
- Stock
- 11,900
- In Stock :
- 11,900
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 50A
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 36 ns
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 15 ns
- Operating Temperature :
- -55°C~175°C TJ
- Base Part Number :
- STP55N
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Height :
- 9.3mm
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Factory Lead Time :
- 12 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3 Full Pack
- Current Rating :
- 50A
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 27.5A, 10V
- Dual Supply Voltage :
- 60V
- Radiation Hardening :
- No
- Resistance :
- 18mOhm
- Drain to Source Breakdown Voltage :
- 60V
- Mount :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 200A
- Power Dissipation :
- 30W
- Number of Elements :
- 1
- Length :
- 10.4mm
- Width :
- 4.6mm
- Turn On Delay Time :
- 20 ns
- Threshold Voltage :
- 3V
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Rise Time :
- 50ns
- Mounting Type :
- Through Hole
- Case Connection :
- Isolated
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JEDEC-95 Code :
- TO-220AB
- Voltage - Rated DC :
- 60V
- Series :
- STripFET™ II
- JESD-609 Code :
- e3
- Nominal Vgs :
- 3 V
- Element Configuration :
- Single
- Power Dissipation-Max :
- 30W Tc
- Datasheets
- STP55NF06FP

N-Channel Tube 18m Ω @ 27.5A, 10V ±20V 1300pF @ 25V 60nC @ 10V TO-220-3 Full Pack
STP55NF06FP Description
STP55NF06FP emerges as a member of N-channel STripFET? II power MOSFETs provided by STMicroelectronics based on its unique STripFET process that is developed to minimize input capacitance and gate charge. The resulting STP55NF06FP can be widely used for applications requiring low gate charge, and it can be as a primary switch in high-efficiency isolated DC/DC converters for telecom and computer applications.
STP55NF06FP Features
-
Low gate charge
-
Low input capacitance
-
Unique STripFET process
-
Exceptional dv/dt capability
-
Available in the TO-220 package
STP55NF06FP Applications
-
Switching applications
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