STP55NF06FP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Resistance :

18mOhm

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Radiation Hardening :

No

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Turn-Off Delay Time :

36 ns

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Power Dissipation :

30W

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

60V

Power Dissipation-Max :

30W Tc

Base Part Number :

STP55N

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Nominal Vgs :

3 V

Turn On Delay Time :

20 ns

Continuous Drain Current (ID) :

50A

Lead Free :

Lead Free

Fall Time (Typ) :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

50ns

Current - Continuous Drain (Id) @ 25°C :

50A Tc

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Current Rating :

50A

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Series :

STripFET™ II

Dual Supply Voltage :

60V

Vgs (Max) :

±20V

FET Type :

N-Channel

Pin Count :

3

JESD-609 Code :

e3

Voltage - Rated DC :

60V

Height :

9.3mm

Rds On (Max) @ Id, Vgs :

18m Ω @ 27.5A, 10V

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

Length :

10.4mm

Number of Pins :

3

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.6mm

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

200A

Terminal Finish :

Matte Tin (Sn) - annealed

Factory Lead Time :

12 Weeks

Threshold Voltage :

3V

Case Connection :

Isolated