STP55NF06FP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Drain to Source Breakdown Voltage :

60V

Current Rating :

50A

Dual Supply Voltage :

60V

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3 Full Pack

Case Connection :

Isolated

Radiation Hardening :

No

Resistance :

18mOhm

Rds On (Max) @ Id, Vgs :

18m Ω @ 27.5A, 10V

JESD-609 Code :

e3

Height :

9.3mm

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

200A

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Packaging :

Tube

Width :

4.6mm

Mount :

Through Hole

Voltage - Rated DC :

60V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

3 V

Terminal Finish :

Matte Tin (Sn) - annealed

Threshold Voltage :

3V

Turn On Delay Time :

20 ns

Series :

STripFET™ II

Rise Time :

50ns

Length :

10.4mm

Element Configuration :

Single

Fall Time (Typ) :

15 ns

Transistor Application :

SWITCHING

Power Dissipation :

30W

Continuous Drain Current (ID) :

50A

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

36 ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STP55N

Number of Pins :

3

Power Dissipation-Max :

30W Tc

Number of Elements :

1