STP50NF25

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Power Dissipation-Max :

160W Tc

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Contact Plating :

Tin

Drain Current-Max (Abs) (ID) :

45A

Termination :

Through Hole

Turn-Off Delay Time :

63 ns

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Resistance :

69mOhm

Continuous Drain Current (ID) :

22A

FET Type :

N-Channel

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

2670pF @ 25V

Fall Time (Typ) :

20 ns

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

68.2nC @ 10V

Rise Time :

26ns

Base Part Number :

STP50N

Drain to Source Breakdown Voltage :

250V

Transistor Application :

SWITCHING

Series :

STripFET™

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Packaging :

Tube

Element Configuration :

Single

Height :

15.75mm

Turn On Delay Time :

45 ns

Operating Temperature :

-55°C~150°C TJ

Dual Supply Voltage :

250V

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Lead Free :

Lead Free

Number of Elements :

1

Length :

10.4mm

Power Dissipation :

160W

Width :

4.6mm

Rds On (Max) @ Id, Vgs :

69m Ω @ 22A, 10V

Threshold Voltage :

3V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

3 V

Radiation Hardening :

No

Package / Case :

TO-220-3