STP55NF06

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Rise Time :

50ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Drain to Source Breakdown Voltage :

60V

Width :

4.6mm

Element Configuration :

Single

Power Dissipation :

30W

Fall Time (Typ) :

15 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

200A

Drain Current-Max (Abs) (ID) :

55A

Pin Count :

3

FET Type :

N-Channel

Resistance :

18mOhm

Number of Pins :

3

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Mounting Type :

Through Hole

Number of Terminations :

3

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

18m Ω @ 27.5A, 10V

Height :

9.15mm

Length :

10.4mm

Mount :

Through Hole

Base Part Number :

STP55N

Dual Supply Voltage :

60V

Factory Lead Time :

12 Weeks

Weight :

4.535924g

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

50A

Turn On Delay Time :

20 ns

Series :

STripFET™ II

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

60V

Transistor Element Material :

SILICON

Packaging :

Tube

Threshold Voltage :

3V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Nominal Vgs :

3 V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Power Dissipation-Max :

110W Tc

Turn-Off Delay Time :

36 ns

Terminal Finish :

Matte Tin (Sn)

Current Rating :

50A

Operating Temperature :

-55°C~175°C TJ