STP55NF06
- Mfr.Part #
- STP55NF06
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 50A TO220AB
- Stock
- 10,551
- In Stock :
- 10,551
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Dual Supply Voltage :
- 60V
- Drain Current-Max (Abs) (ID) :
- 55A
- Continuous Drain Current (ID) :
- 50A
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Rise Time :
- 50ns
- Current Rating :
- 50A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Width :
- 4.6mm
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Factory Lead Time :
- 12 Weeks
- Number of Elements :
- 1
- Mount :
- Through Hole
- Element Configuration :
- Single
- Series :
- STripFET™ II
- Transistor Application :
- SWITCHING
- Length :
- 10.4mm
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 15 ns
- JEDEC-95 Code :
- TO-220AB
- Turn-Off Delay Time :
- 36 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Packaging :
- Tube
- Turn On Delay Time :
- 20 ns
- Threshold Voltage :
- 3V
- Vgs (Max) :
- ±20V
- Height :
- 9.15mm
- Terminal Finish :
- Matte Tin (Sn)
- Pulsed Drain Current-Max (IDM) :
- 200A
- Voltage - Rated DC :
- 60V
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Nominal Vgs :
- 3 V
- Number of Pins :
- 3
- Resistance :
- 18mOhm
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Base Part Number :
- STP55N
- Power Dissipation :
- 30W
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 60V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 27.5A, 10V
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Power Dissipation-Max :
- 110W Tc
- Weight :
- 4.535924g
- Datasheets
- STP55NF06

N-Channel Tube 18m Ω @ 27.5A, 10V ±20V 1300pF @ 25V 60nC @ 10V TO-220-3
STP55NF06 Description
The STP55NF06 is a 60V N-channel Power MOSFET realized with a unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is, therefore, suitable as a primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer application. The STP55NF06 is also intended for any application with low gate charge drive requirements. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
STP55NF06 Features
-
100% avalanche tested
-
Exceptional dv/dt capability
-
Drain-source voltage: 60v
-
Gate- source voltage: ±20v
-
Max. operating junction temperature: -55 to 175℃
STP55NF06 Applications
-
Rotary Switch
-
DIP Switch
-
Limit Switch
-
Reed Switch
-
Rocker Switch
-
Toggle Switch
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