STP57N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

250W Tc

Length :

10.4mm

Rds On (Max) @ Id, Vgs :

63m Ω @ 21A, 10V

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Power Dissipation :

250W

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Turn On Delay Time :

73 ns

Gate to Source Voltage (Vgs) :

25V

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Number of Pins :

3

Operating Temperature :

150°C TJ

Package / Case :

TO-220-3

Resistance :

63mOhm

Rise Time :

15ns

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

960 mJ

Drain to Source Breakdown Voltage :

650V

Lead Free :

Lead Free

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Vgs (Max) :

±25V

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 100V

Fall Time (Typ) :

19 ns

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

42A

Radiation Hardening :

No

Series :

MDmesh™ V

Factory Lead Time :

17 Weeks

Turn-Off Delay Time :

12 ns

Transistor Element Material :

SILICON

Height :

15.75mm

Base Part Number :

STP57N

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA

Case Connection :

DRAIN

Width :

4.6mm

Number of Elements :

1