STP55NF06L
- Mfr.Part #
- STP55NF06L
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 55A TO220AB
- Stock
- 9,192
- In Stock :
- 9,192
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 27.5A, 10V
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 55A Tc
- Fall Time (Typ) :
- 20 ns
- Pulsed Drain Current-Max (IDM) :
- 220A
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 4.5V
- Continuous Drain Current (ID) :
- 55A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V 5V
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 20 ns
- Element Configuration :
- Single
- Power Dissipation :
- 95W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.4mm
- Mount :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Matte Tin (Sn)
- Weight :
- 4.535924g
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±16V
- Rise Time :
- 100ns
- Package / Case :
- TO-220-3
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 25V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Series :
- STripFET™ II
- Nominal Vgs :
- 1.7 V
- Gate to Source Voltage (Vgs) :
- 16V
- Transistor Application :
- SWITCHING
- Width :
- 4.6mm
- Voltage - Rated DC :
- 60V
- Threshold Voltage :
- 1.7V
- Factory Lead Time :
- 12 Weeks
- Case Connection :
- DRAIN
- Height :
- 9.15mm
- JEDEC-95 Code :
- TO-220AB
- Current Rating :
- 55A
- Resistance :
- 18mOhm
- Vgs(th) (Max) @ Id :
- 1.7V @ 250μA
- Power Dissipation-Max :
- 95W Tc
- Base Part Number :
- STP55N
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Turn-Off Delay Time :
- 40 ns
- Datasheets
- STP55NF06L

N-Channel Tube 18m Ω @ 27.5A, 10V ±16V 1700pF @ 25V 37nC @ 4.5V TO-220-3
The STP55NF06L is a N-channel Power MOSFET, latest development of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STP55NF06L Features
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
ultra-low gate charge?
?low on-resistance
STP55NF06L Applications
Audio
Signal Processing
Switching application
SMPS, battery-powered motors,?motor controls and
drives,
Inverters
computers
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