STP50

Manufacturer :

Banner Engineering

Product Category :

Package / Case :

TO-220-3

Power Dissipation-Max :

180W Tc

Drain-source On Resistance-Max :

0.027Ohm

Drain to Source Breakdown Voltage :

100V

Number of Elements :

1

ECCN Code :

EAR99

FET Type :

N-Channel

Voltage :

100V

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Series :

STripFET™

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Reach Compliance Code :

not_compliant

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

300 mJ

Rds On (Max) @ Id, Vgs :

27m Ω @ 25A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Base Part Number :

STP50N

Rise Time :

135ns

Pin Count :

3

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

50A

Gate Charge (Qg) (Max) @ Vgs :

166nC @ 10V

Operating Temperature :

175°C TJ

Power Dissipation :

180W

Lead Free :

Contains Lead

Current :

50A

Current Rating :

50A

Current - Continuous Drain (Id) @ 25°C :

50A Tc

JESD-30 Code :

R-PSFM-T3

Voltage - Rated DC :

100V