STP50NE10
- Mfr.Part #
- STP50NE10
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 50A TO220AB
- Stock
- 26,185
- In Stock :
- 26,185
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- STP50N
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Series :
- STripFET™
- Current :
- 50A
- Package / Case :
- TO-220-3
- Gate Charge (Qg) (Max) @ Vgs :
- 166nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 100V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Voltage :
- 100V
- Pin Count :
- 3
- Drain to Source Breakdown Voltage :
- 100V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- RoHS Status :
- Non-RoHS Compliant
- Rise Time :
- 135ns
- Operating Temperature :
- 175°C TJ
- Current Rating :
- 50A
- Mount :
- Through Hole
- Power Dissipation-Max :
- 180W Tc
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- JESD-30 Code :
- R-PSFM-T3
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 50A
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Contains Lead
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Reach Compliance Code :
- not_compliant
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 25A, 10V
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 180W
- Drain-source On Resistance-Max :
- 0.027Ohm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Datasheets
- STP50NE10

N-Channel Tube 27m Ω @ 25A, 10V ±20V 6000pF @ 25V 166nC @ 10V TO-220-3
STP50NE10 Description
The STP50NE10 is a Power MOSFET from the latest development of STMicroelectronics's unique "Single Feature Size?" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STP50NE10 Features
-
Exceptional dv/dt capabilities
-
100% avalanche tested
-
Low gate charge
-
Application-oriented characterization
STP50NE10 Applications
-
Motor control
-
DC-DC&DC-AC converters
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