STP5N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Radiation Hardening :

No

FET Type :

N-Channel

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

3.7A

Case Connection :

DRAIN

Weight :

329.988449mg

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1.85A, 10V

Number of Channels :

1

Drain to Source Breakdown Voltage :

600V

Length :

10.4mm

Current - Continuous Drain (Id) @ 25°C :

3.7A Tc

Number of Elements :

1

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

70 ns

Power Dissipation-Max :

45W Tc

Series :

MDmesh™ II Plus

Lead Free :

Lead Free

Width :

4.6mm

Height :

15.75mm

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

25V

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

165pF @ 100V

Packaging :

Tube

Mount :

Through Hole

Turn On Delay Time :

11.8 ns

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

80 mJ

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Transistor Application :

SWITCHING

Base Part Number :

STP5N

Number of Pins :

3