STP5N52K3
- Mfr.Part #
- STP5N52K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 525V 4.4A TO220
- Stock
- 50,056
- In Stock :
- 50,056
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 70W Tc
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 29 ns
- Length :
- 10.4mm
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 450pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Vgs (Max) :
- ±30V
- Lead Free :
- Lead Free
- Threshold Voltage :
- 3.75V
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 2.2A, 10V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Base Part Number :
- STP5N
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 9 ns
- Element Configuration :
- Single
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3
- Resistance :
- 1.5Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 11ns
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 4.6mm
- Power Dissipation :
- 70W
- Drain to Source Breakdown Voltage :
- 525V
- Height :
- 15.75mm
- Series :
- SuperMESH3™
- Continuous Drain Current (ID) :
- 4.4A
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Tc
- Fall Time (Typ) :
- 16 ns
- Datasheets
- STP5N52K3

N-Channel Tube 1.5 Ω @ 2.2A, 10V ±30V 450pF @ 100V 14nC @ 10V TO-220-3
STP5N52K3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 450pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.4A amps.In this device, the drain-source breakdown voltage is 525V and VGS=525V, so the drain-source breakdown voltage is 525V in this case.It is [29 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3.75V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STP5N52K3 Features
a continuous drain current (ID) of 4.4A
a drain-to-source breakdown voltage of 525V voltage
the turn-off delay time is 29 ns
a threshold voltage of 3.75V
STP5N52K3 Applications
There are a lot of STMicroelectronics
STP5N52K3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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