STP50NE08

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

200A

Drain to Source Breakdown Voltage :

80V

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Power Dissipation :

150W

Element Configuration :

Single

Terminal Finish :

Tin

Mount :

Through Hole

Current Rating :

50A

JESD-609 Code :

e3

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Voltage - Rated DC :

80V

Mounting Type :

Through Hole

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

30 ns

Operating Temperature :

175°C TJ

Avalanche Energy Rating (Eas) :

300 mJ

Rds On (Max) @ Id, Vgs :

24m Ω @ 25A, 10V

Drain-source On Resistance-Max :

0.024Ohm

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Part Number :

STP50N

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-220-3

Rise Time :

95ns

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Continuous Drain Current (ID) :

50A

Power Dissipation-Max :

150W Tc