STP50NE08

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

50A

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

200A

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Fall Time (Typ) :

30 ns

Rds On (Max) @ Id, Vgs :

24m Ω @ 25A, 10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

300 mJ

JESD-609 Code :

e3

Power Dissipation :

150W

Package / Case :

TO-220-3

JESD-30 Code :

R-PSFM-T3

Element Configuration :

Single

Terminal Finish :

Tin

Power Dissipation-Max :

150W Tc

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Mounting Type :

Through Hole

Lead Free :

Contains Lead

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Drain-source On Resistance-Max :

0.024Ohm

Operating Temperature :

175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Voltage - Rated DC :

80V

Packaging :

Tube

Drain to Source Breakdown Voltage :

80V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Current Rating :

50A

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

Non-RoHS Compliant

Rise Time :

95ns

Qualification Status :

Not Qualified

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Transistor Application :

SWITCHING

Base Part Number :

STP50N

FET Type :

N-Channel