STP75

Manufacturer :

Banner Engineering

Product Category :

Height :

9.15mm

Rise Time :

100ns

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Threshold Voltage :

3V

Length :

10.4mm

Fall Time (Typ) :

30 ns

Turn-Off Delay Time :

66 ns

Transistor Element Material :

SILICON

Power Dissipation :

300W

Continuous Drain Current (ID) :

80A

Rds On (Max) @ Id, Vgs :

11m Ω @ 40A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Number of Elements :

1

Power Dissipation-Max :

300W Tc

Voltage - Rated DC :

75V

Weight :

9.071847g

Resistance :

11mOhm

Mount :

Through Hole

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Transistor Application :

SWITCHING

Pin Count :

3

Width :

4.6mm

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

75V

Mounting Type :

Through Hole

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

75A

Packaging :

Tube

Package / Case :

TO-220-3

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Series :

STripFET™ II

Turn On Delay Time :

25 ns

Avalanche Energy Rating (Eas) :

700 mJ

Base Part Number :

STP75N

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Current Rating :

80A

Factory Lead Time :

12 Weeks