STP76NF75

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Rise Time :

100ns

Power Dissipation-Max :

300W Tc

Pin Count :

3

Power Dissipation :

300W

Turn On Delay Time :

25 ns

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

700 mJ

Number of Elements :

1

Turn-Off Delay Time :

66 ns

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

320A

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Gate to Source Voltage (Vgs) :

20V

Base Part Number :

STP76N

JESD-609 Code :

e3

Continuous Drain Current (ID) :

80A

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

11m Ω @ 40A, 10V

Drain to Source Breakdown Voltage :

75V

Package / Case :

TO-220-3

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Packaging :

Tube

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

30 ns

Series :

STripFET™ II

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V