STP25

Manufacturer :

Banner Engineering

Product Category :

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

25V

Base Part Number :

STP25N

Continuous Drain Current (ID) :

21A

Fall Time (Typ) :

24 ns

Pin Count :

3

Turn-Off Delay Time :

94 ns

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Series :

MDmesh™ II

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Current Rating :

20A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Voltage - Rated DC :

600V

Vgs (Max) :

±25V

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Power Dissipation :

160W

Avalanche Energy Rating (Eas) :

850 mJ

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3

FET Type :

N-Channel

Current :

20A

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

160m Ω @ 10.5A, 10V

Voltage :

650V

Resistance :

160mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Packaging :

Tube

Rise Time :

18ns

Drain to Source Breakdown Voltage :

600V

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 50V

Operating Temperature :

150°C TJ

Power Dissipation-Max :

160W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Mount :

Through Hole