STP25

Manufacturer :

Banner Engineering

Product Category :

JESD-609 Code :

e3

Current Rating :

20A

Drain to Source Breakdown Voltage :

600V

Power Dissipation-Max :

160W Tc

Rise Time :

18ns

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Voltage :

650V

Fall Time (Typ) :

24 ns

Avalanche Energy Rating (Eas) :

850 mJ

Voltage - Rated DC :

600V

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

25V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

94 ns

Resistance :

160mOhm

Power Dissipation :

160W

Package / Case :

TO-220-3

Series :

MDmesh™ II

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Reach Compliance Code :

not_compliant

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 50V

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Not Qualified

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

21A

Current :

20A

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

160m Ω @ 10.5A, 10V

Base Part Number :

STP25N

Number of Pins :

3

ECCN Code :

EAR99