STP20NF20

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

STripFET™

Input Capacitance (Ciss) (Max) @ Vds :

940pF @ 25V

RoHS Status :

ROHS3 Compliant

Length :

10.4mm

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Current Rating :

18A

Package / Case :

TO-220-3

Pin Count :

3

ECCN Code :

EAR99

Rise Time :

30ns

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

18A

Vgs (Max) :

±20V

Case Connection :

Isolated

Turn-Off Delay Time :

40 ns

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

125mOhm

Mounting Type :

Through Hole

Lead Free :

Lead Free

Base Part Number :

STP20N

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

110W Tc

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Pulsed Drain Current-Max (IDM) :

72A

Packaging :

Tube

Turn On Delay Time :

15 ns

Element Configuration :

Single

Radiation Hardening :

No

Width :

4.6mm

Factory Lead Time :

12 Weeks

Power Dissipation :

90W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

3V

Fall Time (Typ) :

10 ns

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

125m Ω @ 10A, 10V

Height :

15.75mm

Drain to Source Breakdown Voltage :

200V

Voltage - Rated DC :

200V

Operating Mode :

ENHANCEMENT MODE