STP200NF04

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

FET Type :

N-Channel

Power Dissipation :

310W

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 90A, 10V

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

480A

Transistor Application :

SWITCHING

Radiation Hardening :

No

ECCN Code :

EAR99

Mount :

Through Hole

Height :

15.75mm

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-220-3

Drain to Source Breakdown Voltage :

40V

Rise Time :

320ns

Width :

4.6mm

Series :

STripFET™ II

Voltage - Rated DC :

40V

Threshold Voltage :

4V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Fall Time (Typ) :

120 ns

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Number of Pins :

3

Turn On Delay Time :

30 ns

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STP200

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

No SVHC

Turn-Off Delay Time :

140 ns

Current Rating :

120A

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Continuous Drain Current (ID) :

120A

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

310W Tc

Length :

10.4mm

Pin Count :

3

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)