STP200NF04

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

15.75mm

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Turn On Delay Time :

30 ns

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 90A, 10V

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Number of Pins :

3

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

4V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

40V

Power Dissipation-Max :

310W Tc

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

140 ns

Series :

STripFET™ II

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Number of Terminations :

3

FET Type :

N-Channel

Width :

4.6mm

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

120 ns

Base Part Number :

STP200

Transistor Application :

SWITCHING

Current Rating :

120A

Packaging :

Tube

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Power Dissipation :

310W

Continuous Drain Current (ID) :

120A

Package / Case :

TO-220-3

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

480A

Voltage - Rated DC :

40V

Length :

10.4mm

RoHS Status :

ROHS3 Compliant

Rise Time :

320ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)