STP200NF04

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Power Dissipation :

310W

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Package / Case :

TO-220-3

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

310W Tc

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Number of Terminations :

3

Mounting Type :

Through Hole

Rise Time :

320ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Packaging :

Tube

Width :

4.6mm

Base Part Number :

STP200

FET Type :

N-Channel

Continuous Drain Current (ID) :

120A

JESD-609 Code :

e3

Turn On Delay Time :

30 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

480A

Voltage - Rated DC :

40V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

40V

Fall Time (Typ) :

120 ns

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 90A, 10V

Pin Count :

3

Lead Free :

Lead Free

Vgs (Max) :

±20V

Height :

15.75mm

Length :

10.4mm

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Threshold Voltage :

4V

Transistor Element Material :

SILICON

Series :

STripFET™ II

ECCN Code :

EAR99

Current Rating :

120A

Turn-Off Delay Time :

140 ns

Transistor Application :

SWITCHING

Mount :

Through Hole