STP200N6F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0038Ohm

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Fall Time (Typ) :

14 ns

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

330W Tc

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Transistor Element Material :

SILICON

Series :

STripFET™

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Base Part Number :

STP200

Packaging :

Tube

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Additional Feature :

ULTRA-LOW RESISTANCE

Power Dissipation :

330W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Radiation Hardening :

No

Turn-Off Delay Time :

86 ns

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

60V

Continuous Drain Current (ID) :

120A

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

480A

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 60A, 10V

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Rise Time :

75ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Terminal Finish :

Matte Tin (Sn)

Turn On Delay Time :

26 ns

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V