STP5NK60Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Vgs (Max) :

±30V

Power Dissipation-Max :

90W Tc

Fall Time (Typ) :

25 ns

Turn-Off Delay Time :

36 ns

Turn On Delay Time :

16 ns

Continuous Drain Current (ID) :

5A

Threshold Voltage :

3.75V

Avalanche Energy Rating (Eas) :

220 mJ

JESD-609 Code :

e3

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

20A

Element Configuration :

Single

Mount :

Through Hole

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Number of Pins :

3

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Base Part Number :

STP5N

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

30V

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

600V

Number of Elements :

1

Height :

15.75mm

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 2.5A, 10V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

90W

Voltage - Rated DC :

600V

Series :

SuperMESH™

Packaging :

Tube

Width :

4.6mm

JEDEC-95 Code :

TO-220AB

Length :

10.4mm

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

Current Rating :

5A

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Mounting Type :

Through Hole

Resistance :

1.6Ohm

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Rise Time :

25ns

Drain Current-Max (Abs) (ID) :

5A

Number of Terminations :

3