STP5NK52ZD
- Mfr.Part #
- STP5NK52ZD
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 520V 4.4A TO220AB
- Stock
- 7,200
- In Stock :
- 7,200
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Power Dissipation :
- 70W
- Terminal Finish :
- Matte Tin (Sn)
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 10.4mm
- Continuous Drain Current (ID) :
- 4.4A
- Height :
- 15.75mm
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Tc
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 16.9nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Drain to Source Breakdown Voltage :
- 520V
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 2.2A, 10V
- Base Part Number :
- STP5N
- Input Capacitance (Ciss) (Max) @ Vds :
- 529pF @ 25V
- Rise Time :
- 13.6ns
- Radiation Hardening :
- No
- Additional Feature :
- AVALANCHE RATED
- Transistor Element Material :
- SILICON
- Width :
- 4.6mm
- Fall Time (Typ) :
- 15 ns
- Package / Case :
- TO-220-3
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 11.4 ns
- Power Dissipation-Max :
- 25W Tc
- Series :
- SuperMESH™
- Turn-Off Delay Time :
- 23.1 ns
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- STP5NK52ZD

N-Channel Tube 1.5 Ω @ 2.2A, 10V ±30V 529pF @ 25V 16.9nC @ 10V TO-220-3
STP5NK52ZD Overview
A device's maximal input capacitance is 529pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.4A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 520V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 23.1 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).
STP5NK52ZD Features
a continuous drain current (ID) of 4.4A
a drain-to-source breakdown voltage of 520V voltage
the turn-off delay time is 23.1 ns
STP5NK52ZD Applications
There are a lot of STMicroelectronics
STP5NK52ZD applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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