STP5NK40Z
- Mfr.Part #
- STP5NK40Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 3A TO220AB
- Stock
- 1,368
- In Stock :
- 1,368
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 130 mJ
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Series :
- SuperMESH™
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Reach Compliance Code :
- not_compliant
- Turn-Off Delay Time :
- 22.5 ns
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 3A
- Rds On (Max) @ Id, Vgs :
- 1.8 Ω @ 1.5A, 10V
- Current Rating :
- 3A
- Power Dissipation-Max :
- 45W Tc
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Number of Elements :
- 1
- Power Dissipation :
- 45W
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 305pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 3A
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3
- Terminal Finish :
- Matte Tin (Sn)
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Base Part Number :
- STP5N
- Rise Time :
- 6ns
- JESD-30 Code :
- R-PSFM-T3
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 400V
- Pulsed Drain Current-Max (IDM) :
- 12A
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 11 ns
- Voltage - Rated DC :
- 400V
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Datasheets
- STP5NK40Z

N-Channel Tube 1.8 Ω @ 1.5A, 10V ±30V 305pF @ 25V 17nC @ 10V TO-220-3
STP5NK40Z Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 130 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 305pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 400V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 400V.There is no drain current on this device since the maximum continuous current it can conduct is 3A.As a result of its turn-off delay time, which is 22.5 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 12A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
STP5NK40Z Features
the avalanche energy rating (Eas) is 130 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 22.5 ns
based on its rated peak drain current 12A.
STP5NK40Z Applications
There are a lot of STMicroelectronics
STP5NK40Z applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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