STP5NB40

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-220-3

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

4.7A Tc

Series :

PowerMESH™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

80W

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

FET Type :

N-Channel

Power Dissipation-Max :

80W Tc

Rise Time :

8ns

Continuous Drain Current (ID) :

4.7A

Fall Time (Typ) :

6 ns

Avalanche Energy Rating (Eas) :

200 mJ

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

3

Packaging :

Tube

Number of Elements :

1

Vgs (Max) :

±30V

JEDEC-95 Code :

TO-220AB

Base Part Number :

STP5N

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Operating Temperature :

150°C TJ

Current Rating :

4.7A

Lead Free :

Contains Lead

Pulsed Drain Current-Max (IDM) :

19A

JESD-30 Code :

R-PSFM-T3

Drain to Source Breakdown Voltage :

400V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 250μA

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 2.3A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

405pF @ 25V

Element Configuration :

Single

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Mounting Type :

Through Hole

Voltage - Rated DC :

400V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING