STP3NK60Z
- Mfr.Part #
- STP3NK60Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 2.4A TO220AB
- Stock
- 10,393
- In Stock :
- 10,393
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 311pF @ 25V
- Turn-Off Delay Time :
- 19 ns
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Mount :
- Through Hole
- Resistance :
- 3.6Ohm
- Number of Elements :
- 1
- Turn On Delay Time :
- 9 ns
- Number of Terminations :
- 3
- Power Dissipation :
- 45W
- Current Rating :
- 2.4A
- Rds On (Max) @ Id, Vgs :
- 3.6 Ω @ 1.2A, 10V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn)
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- 600V
- Gate to Source Voltage (Vgs) :
- 30V
- REACH SVHC :
- No SVHC
- Base Part Number :
- STP3N
- Vgs (Max) :
- ±30V
- Series :
- SuperMESH™
- ECCN Code :
- EAR99
- Rise Time :
- 14ns
- Pulsed Drain Current-Max (IDM) :
- 9.6A
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 2.4A Tc
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 45W Tc
- JEDEC-95 Code :
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs :
- 11.8nC @ 10V
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 14 ns
- Continuous Drain Current (ID) :
- 2.4A
- Drain to Source Breakdown Voltage :
- 600V
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Pin Count :
- 3
- Package / Case :
- TO-220-3
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Threshold Voltage :
- 3.75V
- Datasheets
- STP3NK60Z

N-Channel Tube 3.6 Ω @ 1.2A, 10V ±30V 311pF @ 25V 11.8nC @ 10V TO-220-3
STP3NK60Z Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed by STMicroelectronics using the SuperMESHTM technology, which is an improvement on the well-known PowerMESHTM. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.
STP3NK60Z Features
? Exceptional dv/dt capabilities
? Avalanche-proofed to the nth degree
? The gate charge has been reduced.
? Inherent capacitance is extremely low.
? Protected by a zener
STP3NK60Z Applications
Switching applications
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