STP30NM50N
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- Mfr.Part #
- STP30NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 27A TO220-3
- Stock
- 1,197
- In Stock ：
- 1,197
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Series :
- MDmesh™ II
- Gate to Source Voltage (Vgs) :
- 25V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 900 mJ
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 115m Ω @ 13.5A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 60 ns
- Number of Terminations :
- 3
- Vgs (Max) :
- ±25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 500V
- JEDEC-95 Code :
- TO-220AB
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3
- Turn-Off Delay Time :
- 115 ns
- Resistance :
- 115mOhm
- Power Dissipation :
- 190W
- Gate Charge (Qg) (Max) @ Vgs :
- 94nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2740pF @ 50V
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 27A Tc
- FET Type :
- N-Channel
- Rise Time :
- 20ns
- Base Part Number :
- STP30N
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 190W Tc
- Continuous Drain Current (ID) :
- 27A
- Operating Temperature :
- 150°C TJ
- Datasheets
- STP30NM50N
N-Channel Tube 115m Ω @ 13.5A, 10V ±25V 2740pF @ 50V 94nC @ 10V TO-220-3
STP30NM50N Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 900 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2740pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 27A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [115 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STP30NM50N Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 115 ns
STP30NM50N Applications
There are a lot of STMicroelectronics
STP30NM50N applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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