STP30NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

100A

Package / Case :

TO-220-3

Power Dissipation-Max :

190W Tc

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

190W

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 50V

Continuous Drain Current (ID) :

25A

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Series :

MDmesh™ II

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Base Part Number :

STP30N

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Packaging :

Tube

Number of Elements :

1

Number of Terminations :

3

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Fall Time (Typ) :

70 ns

Mount :

Through Hole

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Resistance :

130mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

3 V

Drain to Source Breakdown Voltage :

600V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

130m Ω @ 12.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Rise Time :

24ns

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 10V

JEDEC-95 Code :

TO-220AB

Turn-Off Delay Time :

125 ns

Pin Count :

3

Element Configuration :

Single

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

900 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED