STP31N65M5
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- Mfr.Part #
- STP31N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 22A TO220
- Stock
- 26,306
- In Stock ：
- 26,306
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Power Dissipation :
- 150W
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Turn On Delay Time :
- 46 ns
- Resistance :
- 148mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 148m Ω @ 11A, 10V
- Number of Pins :
- 3
- Series :
- MDmesh™ V
- Factory Lead Time :
- 17 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±25V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Continuous Drain Current (ID) :
- 22A
- Gate to Source Voltage (Vgs) :
- 25V
- Drain to Source Breakdown Voltage :
- 650V
- Length :
- 10.4mm
- Turn-Off Delay Time :
- 46 ns
- Width :
- 4.6mm
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 816pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Power Dissipation-Max :
- 150W Tc
- Packaging :
- Tube
- Height :
- 15.75mm
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- Base Part Number :
- STP31N
- Datasheets
- STP31N65M5
N-Channel Tube 148m Ω @ 11A, 10V ±25V 816pF @ 100V 45nC @ 10V TO-220-3
STP31N65M5 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 816pF @ 100V.This device has a continuous drain current (ID) of [22A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=650V, the drain-source breakdown voltage is 650V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 46 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 46 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.Its overall power consumption can be reduced by using drive voltage (10V).
STP31N65M5 Features
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 46 ns
STP31N65M5 Applications
There are a lot of STMicroelectronics
STP31N65M5 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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