STP30NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Packaging :

Tube

Base Part Number :

STP30N

Package / Case :

TO-220-3

Operating Temperature :

150°C TJ

Fall Time (Typ) :

75 ns

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Turn-Off Delay Time :

110 ns

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 50V

Series :

FDmesh™ II

Power Dissipation-Max :

190W Tc

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

900 mJ

Number of Elements :

1

Drain-source On Resistance-Max :

0.385Ohm

Pin Count :

3

Rds On (Max) @ Id, Vgs :

130m Ω @ 12.5A, 10V

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

25V

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

600V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Element Configuration :

Single

Mount :

Through Hole

FET Type :

N-Channel

Continuous Drain Current (ID) :

25A

Vgs (Max) :

±25V

Power Dissipation :

190W

Rise Time :

50ns

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V