STP300NH02L
- Mfr.Part #
- STP300NH02L
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 24V 120A TO220AB
- Stock
- 17,298
- In Stock :
- 17,298
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-220AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Pulsed Drain Current-Max (IDM) :
- 480A
- Package / Case :
- TO-220-3
- Drain to Source Breakdown Voltage :
- 24V
- Power Dissipation-Max :
- 300W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Fall Time (Typ) :
- 94.4 ns
- Number of Elements :
- 1
- Rise Time :
- 275ns
- Base Part Number :
- STP300
- Series :
- STripFET™
- Turn-Off Delay Time :
- 138 ns
- Rds On (Max) @ Id, Vgs :
- 2.2m Ω @ 80A, 10V
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 109.4nC @ 10V
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 1600 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 120A
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 7055pF @ 15V
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Pin Count :
- 3
- Resistance :
- 2.2MOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Power Dissipation :
- 300W
- Datasheets
- STP300NH02L

N-Channel Tube 2.2m Ω @ 80A, 10V ±20V 7055pF @ 15V 109.4nC @ 10V TO-220-3
STP300NH02L Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1600 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 7055pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 120A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 24V, and this device has a drainage-to-source breakdown voltage of 24VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 138 ns.Peak drain current is 480A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STP300NH02L Features
the avalanche energy rating (Eas) is 1600 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 138 ns
based on its rated peak drain current 480A.
STP300NH02L Applications
There are a lot of STMicroelectronics
STP300NH02L applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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